Stochastic Processes Writing Service
Magnetic tunnel junctions (MTJ) are thought about as one of the most appealing prospects for the next generation of nonvolatile memories and programmable reasoning chips. Spin transfer torque
(STT) in MTJs with perpendicular magnetic anisotropy (PMA) displays visible efficiency improvements compared with that with In-plane magnetic anisotropy, especially in regards to thermal stability, important present for changing, gain access to speed and power usage. The STT changing of MTJ has actually been exposed stochastic, which results from inescapable thermal variations of magnetization.
Magnetic tunnel junctions (MTJ) are considered as one of the most promising candidates for the next generation of nonvolatile memories and programmable logic chips. Spin transfer torque (STT) in MTJs with perpendicular magnetic anisotropy (PMA) exhibits noticeable performance enhancements compared to that with In-plane magnetic anisotropy, particularly in terms of thermal stability, critical current for switching, access speed and power consumption. However, the STT switching of MTJ has been revealed stochastic, which results from unavoidable thermal fluctuations of magnetization.
This leads to the occurrence of write errors which deeply affects the reliability of hybrid CMOS/MTJ circuits. In this paper, we present the first spice-compact model of structure PMA-MTJ integrating STT stochastic behaviors. Depending on the relative magnitude between the switching current (I) and the critical current (Ico), the STT stochastic behaviors of this PMA-MTJ can be categorized into two regions: Sun model (I > Ico) and Neel-Brown design (I Ico) and Neel-Brown design